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| Previous Datasheet Index Next Data Sheet Data Sheet No.PD 6.039B IRSF3011 FULLY PROTECTED POWER MOSFET SWITCH Features * * * * * * * * Extremely Rugged for Harsh Operating Environments Over-Temperature Protection Over-Current Protection Active Drain-to-Source Clamp ESD Protection Compatible with Standard Power MOSFET Low Operating Input Current Monolithic Construction Vds(clamp) Rds(on) Ids(sd) Tj(sd) EAS Applications 50V 200m 5A 155C 200mJ Description The IRSF3011 is a three-terminal monolithic Smart Power MOSFET with built-in short circuit, over-temperature, ESD and over-voltage protections. The on-chip protection circuit latches off the power MOSFET in case the drain current exceeds 7A or the junction temperature exceeds 165C and keeps it off until the input is driven low. The drain-to-source voltage is actively clamped at 55V (typical), prior to the avalanche of POWER MOSFET, thus improving its performance during turn-off with inductive loads. The input current requirements are very low (300A) which makes the IRSF3011 compatible with most existing designs based on standard power MOSFETs. * * Solenoid Driver DC Motor Driver Available Packages IRSF3011 (TO-220AB) IRSF3011L (SOT-223) IRSF3011 Block Diagram To Order Previous Datasheet Index Next Data Sheet IRSF3011 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc = 25C unless otherwise specified.) Minimum Maximum Vds, max Vin, max Ids Pd E AS Vesd1 Vesd2 TJop TStg TL Continuous Drain to Source Voltage Continuous Input Voltage Continuous Drain Current Power Dissipation Unclamped Single Pulse Inductive Energy Electrostatic Discharge Voltage (Human Body Model) Electrostatic Discharge Voltage (Machine Model) Operating Junction Temperature Range Storage Temperature Range Lead Temperature (Soldering, 10 seconds) -0.3 -55 -55 50 10 self limited Units V Test Conditions 30 200 4000 1000 self-limited 175 300 W mJ V Tc 25C 1000pF. 1.5k 200pF, 0 C Static Electrical Characteristics (Tc = 25C unless otherwise specified.) Minimum Typical Maximum Units V ds,clamp R ds(on) Drain to Source Clamp Voltage Drain to Source On Resistance 50 1.5 10 54 56 155 200 115 10 2.0 0.25 0.35 0.5 0.6 10.8 1.2 62 200 10 100 250 2.5 0.6 0.85 1.0 1.2 1.5 V m Test Conditions Ids = 10mA Ids = 6A, tp = 700 S Vin = 5V, Ids = 2A Vin = 4V, Ids = 2A Vin = 10V, Ids = 2A Vds = 12V, Vin = 0V Vds = 50V, Vin = 0V Vds=40V,Vin=0V,Tc =150C Vds = 5V, Ids = 10mA Vin = 5V Vin = 10V Vin = 5V Vin = 10V Iin = 10mA Ids = -9A, Rin = 1k I dss Drain to Source Leakage Current A V mA V th I i,on I i, off V in, clamp V sd Input Threshold Voltage Input Supply Current (Normal Operation) Input Supply Current (Protection Mode) Input Clamp Voltage Body-Drain Diode Forward Drop V Thermal Characteristics Minimum Typical Maximum Units Rjc RjA Rjc RjA 2 Test Conditions TO-220AB SOT-223 Junction to Case Junction to Ambient Junction to PCB Junction to PCB 4 62 40 60 C/W C/W To Order Previous Datasheet Index Next Data Sheet IRSF3011 Switching ElectricalCharacteristics (VCC = 14V, Resistive Load (R L) = 5, TC= 25C.) Please refer to Figure 15 for switching time definitions. Minimum Typical Maximum Units tdon tr tdoff tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 160 90 650 250 250 300 180 170 250 1200 350 350 Test Conditions Vin = 5V Vin = 10V Vin = 5V Vin = 10V Vin = 5V Vin = 10V Vin = 5V Vin = 10V nS Protection Characteristics (TC= 25 C unless otherwise specified.) Minimum Typical Maximum Units Ids(sd) Tj(sd) Vprotect tIresp tIblank Ipeak Vreset treset tTresp Over-Current Shutdown Threshold Over Temperature Shutdown Threshold Min. Input Voltage for Over-temp function Over Current Response Time Over Current Blanking Time Peak Short Circuit Current Protection Reset Voltage Protection Reset Time Over-Temperature Response Time 5 155 7 165 3 4 4 16 1.3 8 12 10 A C V S A V S Test Conditions Vin = 5V Vin = 5V, Ids = 2A See Figure 16 for definition See Figure 16 for definition See Figure 16 for definition See Figure 17 for definition See Figure 18 for definition Temperature Coefficients of Electrical Characteristics (Please see Figures 3 through 14 for more data on thermal characteristics of other electrical parameters. Minimum Typical Maximum Units Vds,clamp Vth Vin,clamp Ids(sd) Drain-to-Source Clamp Voltage T.C. Input Threshold Voltage T.C. Input Clamp Voltage T.C. Over-Current Shutdown Threshold T.C. 18.2 -2.7 7.0 -9.8 Test Conditions Ids = 10mA mV/C Vds = 5V, Ids = 10mA Iin = 10mA mA/C Vin = 5V Notes: x When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques, refer to International Rectifier Application Note AN-994. y EAS is tested with a constant current source of 6A applied for 700S with V in = 0V and starting Tj = 25C. z Input current must be limited to less than 5mA with a 1k resistor in series with the input when the Body-Drain Diode is forward biased. To Order 3 Previous Datasheet Index Next Data Sheet IRSF3011 250 T = 25C 225 200 175 Vin = 5V 150 Vin = 8V 125 Vin = 10V 100 1 2 3 4 5 6 7 8 Rds(on) (mOhm) Rds(on) (mOhm) Vin = 4V 300 Ids = 4A 250 Vin = 5V 200 150 Vin = 10V 100 50 -50 -25 0 25 50 75 100 125 150 Ids (A) Temperature (C) Figure 3 On Resistance vs. Drain-to-Source Current Figure 4 On Resistance vs. Temperature Fig. 4 - On Resistance vs. Temperature 8 T = 25C Shut Down Current (A) 9 Vin = 5V Shut Down Current (A) 4 5 6 7 8 9 0 10 8 7.5 7 7 6 6.5 5 6 4 -50 -25 0 25 50 75 100 125 150 Input Voltage (Volts) Temperature (C) Figure 5 Over-Current Shutdown Threshold vs. Input Voltage Figure 6 Over-Current Shutdown Threshold vs. Temperature 4 To Order Previous Datasheet Index Next Data Sheet IRSF3011 1.6 T=25C 1.4 Input Current (mA) Input Current (mA) 1.2 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 9 10 11 Iin,on Iin,off 0.6 Vin = 5V 0.5 0.4 0.3 0.2 Iin,on 0.1 0 -50 -25 0 25 50 75 100 125 150 Iin,off Input Voltage (Volts) Temperature (C) Figure 7 Input Current vs. Input Voltage Figure 8 Input Current vs.Temperature 0.9 0.8 Rise Time, On Delay (S) 0.7 0.6 0.5 Rise Time 0.4 0.3 0.2 0.1 0 3 4 5 6 7 8 9 10 11 On Delay T = 25C Rise Time, On Delay (S) 0.9 0.8 0.7 0.6 0.5 Vin = 5V 0.4 0.3 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 On Delay Rise Time Input Voltage (Volts) Temperature (C) Figure 9 Turn-On Characteristics vs. Input Voltage Figure 10 Turn-On Characteristics vs. Temperature To Order 5 Previous Datasheet Index Next Data Sheet IRSF3011 0.4 T = 25C 0.35 Fall Time, Off Delay (S) 0.3 0.25 0.2 0.15 Fall Time 0.1 0.05 0 3 4 5 6 7 8 9 10 11 Fall Time, Off Delay (S) Off Delay 0.4 Vin = 5V 0.35 Off Delay 0.3 0.25 0.2 0.15 Fall Time 0.1 0.05 0 -50 -25 0 25 50 75 100 125 150 Input Voltage (Volts) Temperature (C) Figure 11 Turn-Off Characteristics vs. Input Voltage Figure 12 Turn-Off Characteristics vs. Temperature 10 Single Pulse Energy to Failure (mJ) 2000 Vdd=25V 1750 Ids = 4A 1500 1250 1000 750 500 250 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 25 50 75 100 125 150 Source to Drain Voltage (Volts) Reverse Drain Current (A) T = 150C T = 25C 1 Starting Junction Temperature (C) Figure 13 Source-Drain Diode Forward Voltage Figure 14 Unclamped Single Pulse Inductive Energy to Failure vs. Starting Junction Temperature 6 To Order Previous Datasheet Index Next Data Sheet IRSF3011 Vin Vin 5V RL = 0 Vcc = 14V 50% t Vds 90% t I ds I peak 10% t tdon tr tdoff tf t Iblank Short applied before turn-on t Iresp Short applied after turn-on t Figure 15 Definition of Switching Times Figure 16 Definition of Ipeak, tlblank, tlresp Vin 5V V in 5V t I ds t < t reset I ds(sd) t > t reset t I ds t RL = 1 mH Vcc = 14V t Tresp RL = 10 Vcc = 14V T J = TJSD + 5C t Figure 17 Definition of t reset Figure 18 Definition of tTresp To Order 7 Previous Datasheet Index Next Data Sheet IRSF3011 Case Outline SOT-223 (IRSF3011L) NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M, 1982 2. Controlling dimension: INCH 3. Dimensions do not include lead flash 4. Conforms to JEDEC outline TO-261AA LEAD ASSIGNMENTS 1. Gate 2. Drain 3. Source 4. Drain DIM A B B1 C D E e e1 H L L1 MILLIMETERS MIN MAX 1.55 1.80 0.65 0.85 2.95 3.15 0.25 0.35 6.30 6.70 3.30 3.70 2.30 BSC 4.60 BSC 6.71 7.29 -- 0.91 0.02 0.10 10 MAX INCHES MIN MAX 0.061 0.071 0.026 0.033 0.116 0.124 0.010 0.014 0.248 0.264 0.130 0.146 .0905 BSC 0.181 BSC 0.287 0.264 -- 0.036 0.0006 0.004 10 MAX 8 To Order Previous Datasheet Index Next Data Sheet IRSF3011 Tape and Reel SOT-223 (IRSF3011L) NOTES: 1. Controlling dimension: MILLIMETER 2. Conforms to outline EIA-481 and EIA-541 3. Each 330.00 (13.00) reel contains 2,500 devices. NOTES: 1. Controlling dimension: MILLIMETER 2. Conforms to outline EIA-481-1 3. Dimension measured at hub 4. Includes flange distortion at outer edge 9 To Order Previous Datasheet Index Next Data Sheet IRSF3011 Case Outline TO-220AB (IRSF3011) NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M, 1982 2. Controlling dimension: INCH 3. Dimensions shown are in millimeters (inches) 4. Conforms to JEDEC outline TO-251AA 5. Dimension does not include solder dip. Solder dip max. +0.16 (.006) LEAD ASSIGNMENTS 1. Gate 2. Drain 3. Source 4. Drain 10 To Order Previous Datasheet Index Next Data Sheet IRSF3011 Application Information Introduction Protected monolithic POWER MOSFETs offer simple, cost effective solutions in applications where extreme operating conditions can occur. The margin between the operating conditions and the absolute maximum values can be narrowed, resulting in better utilization of the device and lower cost. ESD protection also reduces the off-circuit failures during handling and assembly. General Description The IRSF3011 is a fully protected monolithic N-channel logic level POWER MOSFET with 200m (max) on-resistance. The built-in protections include over-current, over-temperature, ESD and over-voltage. The over-current and over-temperature protections make the IRSF3011 indestructible under any load conditions in switching or in linear applications. The built-in ESD protection minimizes the risk of ESD damage when the device is off-circuit. The IRSF3011 is fully characterized for avalanche operation and can be used for fast de-energization of inductive loads. The TO-220 packaged IRSF3011 offers an easy upgrade with direct pin-to-pin replacement from non-protected devices. Block Diagram As illustrated in figure A1, a zener diode between the input and the source provides the ESD protection for the input and also limits the voltage applied to the input to 10V. The R-S flip-flop memorizes the occurrence of an error condition and controls the Q2 and Q3 switches. The flipflop can be cleared by holding the input low for the specified minimum duration. COMP1 and COMP2 comparators are used to compare the over-current and over-temperature signals with the built-in reference. Either comparator can reset the fault flip-flop and turn Q1 off. During fault condition, Q2 disconnects the gate of Q1 from the input, and Q3 shorts the gate and source of Q1, resulting in rapid turn-off of Q1. The zener diode between the gate and drain of Q1 turns Q1 on when the drain to source voltage exceeds 55V. Figure A1. Block Diagram Using higher input voltage will improve the turn-on time but it will not affect the turn-off switching speed. The typical waveforms at 7V input voltage are shown in Figure A3. In typical switching applications (below 60kHz) the difference in switching losses between the IRSF3011 and the same size standard MOSFET is negligible. Input voltage 5V/div. Drain voltage 5V/div. Drain Current: 1A/div. Time: 1sV/div. Switching Characteristics In the IRSF3011, the control logic and the protection circuits are powered from the input pin. When positive voltage appears at the input pin, the R-S flip-flop turns Q2 on and connects the gate of the main device to the input. The turn-on speed is limited by the channel resistance of Q2 and the gate charge requirements of Q1. The typical switching waveforms at 5V input voltage are shown in Figure A2. Figure A2. Waveforms switching clamped inductive load using 5V input voltage Over-Current Protection When the drain current exceeds the preset limit, the protection circuit resets the internal flip-flop and turns Q1 off. Normal operation can be restored by holding the input volt11 To Order Previous Datasheet Index Next Data Sheet IRSF3011 Input voltage 5V/div. Input voltage 5V/div. Drain voltage 5V/div. Drain voltage 5V/div. Drain Current: 2A/div. Drain Current: 1A/div. Time: 1sV/div. Time: 10sV/div. Figure A3. Switching waveforms with 7V Input voltage age below the specified threshold level (approx. 1.3V) for the specified minimum treset time. The typical waveforms at over-current shut-down are shown in Figure A4. After turn-on, the current in the inductor at the drain starts ramping up. At about 7A, the over-current protection shuts down the device. Figure A4. Waveforms at over-current shut-down Input voltage 10V/div. Drain voltage 5V/div. Over-Temperature Protection Figure A5 illustrates the operation of the over-temperature protection. The IRSF3011 switches a 2 resistive load to a 10V power supply. When the thermal balance is established, the junction temperature is limited on a pulse-by-pulse basis. Drain Current: 2A/div. Over-Voltage Protection When the drain-to-source voltage exceeds 55V, the zener diode between gate and drain turns the IRSF3011 on before the breakdown voltage of the drain-source diode is reached. This greatly enhances the energy the device can safely withstand during inductive load turn-offs compared Time: 10sV/div. Figure A5. Over-temperature shut-down to avalanche breakdown. Thus the device can be used for fast de-energization of inductive loads. The absorbed energy is limited only by the maximum junction temperature. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 12/96 12 To Order |
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